收藏本站
MTB30P06V, MTBV30P06V
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? Source Breakdown Voltage
(V GS = 0 Vdc, I D = 0.25 mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V DS = 60 Vdc, V GS = 0 Vdc)
(V DS = 60 Vdc, V GS = 0 Vdc, T J = 150 ° C)
Gate ? Body Leakage Current (V GS = ± 15 Vdc, V DS = 0 Vdc)
V (BR)DSS
I DSS
I GSS
60
?
?
?
?
?
62
?
?
?
?
?
10
100
100
Vdc
mV/ ° C
m Adc
nAdc
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
(V DS = V GS , I D = 250 m Adc)
Threshold Temperature Coefficient (Negative)
Static Drain ? Source On ? Resistance (V GS = 10 Vdc, I D = 15 Adc)
Drain ? Source On ? Voltage
(V GS = 10 Vdc, I D = 30 Adc)
(V GS = 10 Vdc, I D = 15 Adc, T J = 150 ° C)
Forward Transconductance
(V DS = 8.3 Vdc, I D = 15 Adc)
V GS(th)
R DS(on)
V DS(on)
g FS
2.0
?
?
?
?
5.0
2.6
5.3
0.067
2.0
?
7.9
4.0
?
0.08
2.9
2.8
?
Vdc
mV/ ° C
W
Vdc
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
1562
2190
pF
Output Capacitance
Transfer Capacitance
(V DS = 25 Vdc, V GS = 0 Vdc, f = 1.0 MHz)
C oss
C rss
?
?
524
154
730
310
SWITCHING CHARACTERISTICS (Note 3)
Turn ? On Delay Time
t d(on)
?
14.7
30
ns
Rise Time
Turn ? Off Delay Time
Fall Time
(V DD = 30 Vdc, I D = 30 Adc,
V GS = 10 Vdc, R G = 9.1 W )
t r
t d(off)
t f
?
?
?
25.9
98
52.4
50
200
100
Gate Charge
(See Figure 8)
(V DS = 48 Vdc, I D = 30 Adc,
V GS = 10 Vdc)
Q T
Q 1
Q 2
?
?
?
54
9.0
26
80
?
?
nC
Q 3
?
20
?
SOURCE ? DRAIN DIODE CHARACTERISTICS
Forward On ? Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
(I S = 30 Adc, V GS = 0 Vdc)
(I S = 30 Adc, V GS = 0 Vdc, T J = 150 ° C)
(I S = 30 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ m s)
V SD
t rr
t a
t b
Q RR
?
?
?
?
?
?
2.3
1.9
175
107
68
0.965
3.0
?
?
?
?
?
Vdc
ns
m C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25 ″ from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25 ″ from package to source bond pad)
L D
L S
?
?
3.5
4.5
7.5
?
?
nH
nH
2. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
http://onsemi.com
2
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
MTB50P03HDLT4 MOSFET P-CH 30V 50A D2PAK
MTB75N05HDT4 MOSFET N-CH 50V 75A D2PAK-3
MTCBA-C1-N3 MODEM CDMA RS232 DUAL
MTCBA-C1-U-N2 MODEM CDMA USB 800MHZ 1.9GHZ
MTCBA-C1X-N2-NAM MODEM CDMA 800MHZ 1.9GHZ
MTCBA-G-EN-F4-ED-GB/IE MODEM GPRS QUAD EU/UK ETH INTFC
MTCBA-G2 MODEM GPRS CELLULAR SERIAL
MTCBA-H-EN2-NAM WIRELESS ROUTER INTELLIGNT HSDPA
相关代理商/技术参数
MTB30P06VT4G 功能描述:MOSFET PFET D2PAK 60V 30A 80mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
MTB30SA 制造商:未知厂家 制造商全称:未知厂家 功能描述:Full-Size (7.3mm or 4.7mm height)
MTB30SAM 制造商:未知厂家 制造商全称:未知厂家 功能描述:Full-Size (7.3mm or 4.7mm height)
MTB30SAV 制造商:未知厂家 制造商全称:未知厂家 功能描述:Full-Size (7.3mm or 4.7mm height)
MTB30SAVM 制造商:未知厂家 制造商全称:未知厂家 功能描述:Full-Size (7.3mm or 4.7mm height)
MTB30SB 制造商:未知厂家 制造商全称:未知厂家 功能描述:Full-Size (7.3mm or 4.7mm height)
MTB30SBM 制造商:未知厂家 制造商全称:未知厂家 功能描述:Full-Size (7.3mm or 4.7mm height)
MTB30SBV 制造商:未知厂家 制造商全称:未知厂家 功能描述:Full-Size (7.3mm or 4.7mm height)